Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC - UTT - Texte intégral Access content directly
Conference Papers Year : 2023

Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC

Abstract

The improvement of crystal quality in recent years thanks to the advanced fabrication technology development of silicon carbide (SiC) in power electronics, enables the control of optically active defects in SiC, such as silicon vacancies (VSi). In this paper, VSi are created in hexagonal 6H-SiC samples by ion implantation of aluminum or boron, the standard p-type dopants for SiC. Cathodoluminescence (CL) is used to identify the generation of VSi in SiC after ion implantation. Damage of the implanted samples is analyzed by Raman spectroscopy and RBS/C.
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Dates and versions

hal-04304522 , version 1 (28-11-2023)

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Enora Marion Vuillermet, R. Haddadi, N. Bercu, L. Ottaviani, L. Giraudet, et al.. Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC. 2023 International semiconductor conference (CAS) - 46th edition, NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES - IMT Bucharest; IEEE – Electron Devices Society, Oct 2023, Sinaia (Romania), Romania. pp.135-138, ⟨10.1109/CAS59036.2023.10303651⟩. ⟨hal-04304522⟩
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