Super-resolved optical mapping of reactive sulfur-vacancy in 2D transition metal dichalcogenides
Résumé
Transition metal dichalcogenides (TMDs) represent an entire new class of
semiconducting 2D materials with exciting properties. Defects in 2D TMDs can crucially
affect their physical and chemical properties. However, characterization of the presence
and spatial distribution of defects is limited either in throughput or in resolution. Here,
we demonstrate large area mapping of reactive sulfur-deficient defects in 2D-TMDs
coupling single-molecule localization microscopy with fluorescence labeling using thiol
chemistry. Our method, reminiscent of PAINT strategies, relies on the specific binding by
reversible physisorption of fluorescent probes to sulfur-vacancies via a thiol group and
their intermittent emission to apply localization of the labeled defects with a precision
down to 15 nm. Tuning the distance between the fluorophore and the docking thiol site
allows us to control Föster Resonance Energy Transfer (FRET) process and reveal large
structural defects such as grain boundaries and line defects, due to the local irregular
lattice structure. Our methodology provides a simple and fast alternative for large-scale
mapping of non-radiative defects in 2D materials and paves the way for in-situ and
spatially resolved monitoring of the interaction between chemical agent and the defects in
2D materials that has general implications for defect engineering in aqueous condition.
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Superresolvedopticalmappingofreactivesulfurvacancyin2D_PREPRINT.pdf (4.49 Mo)
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nn1c00373_si_001.pdf (6.21 Mo)
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